Bi4Ge3O12 Crystals
Bismuth
Germanate Crystals of Evlitine structure (Bi4Ge3O12)
became well known primarily due to its wide application as scintillation
material
for high energy physics. However this crystal processes also relatively
high electro-optic coefficients which makes it useful for building
Pockels cells, particularly, for application in optical fiber electric
field sensors with high thermal stability. The crystal can be used
also for photorefractive devices working in the UV range.
ELAN fabricates custom designed elements of Bi4Ge3O12 crystals
grown by Czochralsky method and carefully selected and tested for high optical
homogeneity, absence
of bubbles, inclusions and other defects.
Material propeties
| Crystal symmetry |
Cubic, 43m |
| Lattice parameter, A |
10.526 |
| Density, g/cm3 |
7.12 |
| Mohs hardness |
5 |
| Melting point , °C |
1040 |
| Transparency range, nm |
0.3 - 5 |
| Refractive Index |
2.10 |
| Optical Absorption, cm-1 |
1.0 |
| ElectroopticalCoefficient
(r41),pm/V |
1.0 |
| Half-wave Voltage, kV |
|
Dielectric Constant
( low frequency)
|
16 |
NOTE
- If not specified, optical properties are given for wavelength 633 nm.
- Finished
elements are available in sizes (330)x(330)x(3120) mm3.Wafers with dia.
up to 60 mm, or 40x40 mm square, 0.5 - 10.0 mm thick are available.
- Polish
standard: 40/20 S/D, λ/2 flatness, parallelism < 3
- Coatings
available:
a) AR @ 514.5 nm, 532 nm or other on request
b) ITO conductive/transparent coatings
c) electrodes Cr + Au
|